Cu2ZnSnS4(CZTS) thin films were successfully deposited using vacuum thermal evaporation from single quaternary CZTS semiconducting material powder source, followed by annealing at 3 °C for 4 min under high purity N2atmosphere. X-ray diffraction (XRD) patterns indicated that as-deposited CZTS thin films transformed from amorphous state into crystalline state with kesterite structure after annealing. Energy dispersive X-ray spectroscopy (EDS) determined the compositions of the CZTS thin films were Zn-poor, Sn-rich and S-rich. Scanning electron microscope (SEM) images, ultraviolet–visible–near infrared (UV–Vis–NIR) spectra and the Hall measurements showed the annealed CZTS thin film exhibited a smooth, densely packed and homogeneous surface, a direct band gap of 1.55 eV and a p-type conductivity. The fabricated photovoltaic device obtained a conversion efficiency of .36%, open-circuit voltage of 493 mV, short-circuit current density of 1.76 mA·cm, and fill factor of .42.Cu2ZnSnS4material powder was directly used as vacuum thermal evaporation source The annealed Cu2ZnSnS4thin film had smooth, densely packed and homogeneous surface. The device was fabricated with a simple structure of FTO/CdS/CZTS/Al contact. The fabricated device obtained a conversion efficiency of .36%..
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