The effect of light localization in photoluminescence (PL) and Raman scattering (RS) in silicon nanowires with diameter of 1 nm was investigated. The optical excitation was done by CW radiation of a YAG:Nd laser at 1.64 μm. The PL an RS intensities were found to increase strongly for the samples with Si nanowires in comparison with corresponding values of c-Si substrate. The effect is explained by an increase of the lifetime of photons in silicon nanowire structures.
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